| W949D6CBHX5I |
Winbond |
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bit |
SDRAM
|
| W949D6CBHX6E |
Winbond |
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bit |
SDRAM
|
| W949D6CBHX6I |
Winbond |
This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bit |
SDRAM
|
| W955D6F |
Winbond |
|
SDRAM
|
| W956D6D |
Winbond |
The W966D6D is a 64M byte、CMOS pseudo-static random access memories developed for low-power、portable applications、organized as 4 Meg x 16 bits. Support A/D MUX (Address/Data bus multiplex) interface to reduce I/O pin numb |
SDRAM
|
| W958D2B |
Winbond |
The W958D2B is an A/D MUX (Address Data multiplex) 256M byte CellularRAM? compliant products, organized as 8M by 32 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications |
SDRAM
|
| W964A6C |
Winbond |
W964A6C-GW is a 16M bits CMOS pseudo static random access memory (Pseudo SRAM); organized as 1M words x 16 bits. Using advanced single transistor DRAM architecture and 0.175μm process technology; W964A6C-GW delivers fast access cycle time and low power co |
SDRAM
|
| W964D6C |
Winbond |
W964D6C-GW is a 16M bits CMOS pseudo static random access memory (Pseudo SRAM); organized as 1M words x 16 bits. Using advanced single transistor DRAM architecture and 0.175μm process technology; W964D6C-GW delivers fast access cycle time and low power co |
SDRAM
|
| W965A6C |
Winbond |
W965D6C-GW is a 32M bits CMOS Pseudo Static Random Access Memory (PSRAM)、organized as 2M words x 16 bits. Using advanced single-transistor DRAM architecture and 0.13μm process technology. W965D6C-GW delivers fast access cycle time and low power consumptio |
SDRAM
|
| W965A6D |
Winbond |
The W965A6D-GW is a 32M-bit pseudo static random access memory (PSRAM) organized as 2M words by 16 bits. It provides high density、high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the |
SDRAM
|
| W965A6F |
Winbond |
The W965A6F is a 32M byte, high-speed, CMOS pseudo-static random access memories, organized as 2 Meg x 16 bits, developed for low-power, portable applications |
SDRAM
|
| W965D6F |
Winbond |
|
SDRAM
|
| W966A6B |
Winbond |
The W966A6B-GW is a 64M-bit pseudo static random access memory (PSRAM) organized as 4M words by 16 bits. It provides high density、high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the |
SDRAM
|
| W966A6C |
Winbond |
The W966A6C-GW is a 64M-bit pseudo static random access memory (PSRAM) organized as 4M words by 16 bits. It provides high density、high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the |
SDRAM
|
| W966D6B |
Winbond |
The W966A6B-GW is a 64M-bit pseudo static random access memory (PSRAM) organized as 4M words by 16 bits. It provides high density、high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the |
SDRAM
|
| W966D6D |
Winbond |
|
SDRAM
|
| W966D6E |
Winbond |
The W966D6E is a 64M byte、CMOS pseudo-static random access memories developed for low-power、portable applications、organized as 4 Meg x 16 bits. Develop for low power、portable applica |
SDRAM
|
| W967C6A |
Winbond |
The W967C6A-GW is a 128M-bit pseudo static random access memory (PSRAM) organized as 8M words by 16 bits. It provides high density、high speed and low powe |
SDRAM
|
| W967D6D |
Winbond |
The W967D6B-GW is a 128M-bit pseudo static random access memory (PSRAM) organized as 8M words by 16 bits. It provides high density、high speed and low powe |
SDRAM
|
| W968D6B |
Winbond |
The W968D6B is a 256M byte CellularRAM? compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications |
SDRAM
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